Photodoping causes inconsistencies in the injection-dependent lifetimes of perovskite thin films

The carrier lifetime (τ) is an essential parameter for quantifying the recombination in perovskite thin films (PTFs). t is often measured from photoluminescence (PL) techniques such as the transient photoluminescence (TRPL) decay. However, there is no standard analysis for the PL-based lifetime, leading to inconsistencies regarding the bulk doping and charge carrier trapping. This study aims to elucidate these inconsistencies and thus help to determine the most appropriate lifetime model for PTFs. The common models for the TRPL are presented. Next, the injection-dependent apparent lifetime methodology is discussed with respect to the photo-doping effect. Finally, we apply these models to the lifetime measured using the transient and steady-state (SS) excitation modes to resolve inconsistencies in the lifetime analysis caused by the photo-doping.