Effective Passivation of CdTe Rear Interface via Thin Selenium Interface Layer Indicated by Surface Photovoltage Spectroscopy

We present evidence of the passivation of the CdTe back interface by the application of a thin arsenic doped selenium layer. Surface photovoltage spectroscopy measurements are presented indicating the reduction of band bending on the rear surface of completed cadmium telluride photovoltaic cells.