Simulation of hot-carrier filtering in InAs-InP nanowire heterostructures

A microscopic simulation of hot carrier filtering across potential barriers formed by InP-InAs heterostructures in InAs nanowires with localized illumination is discussed. Qualitative agreement with the experimentally observed dependence of the extracted current on photon energy and localized source position is demonstrated. Additionally, the impact on the hot carrier extraction efficiency of carrier relaxation due to electron-phonon interaction is analyzed.