Multi-Bias and Nonlinear Distortion Analysis for GaAs Nano-HEMT: Performance Projection

For active devices like HEMTs made of gallium arsenide (GaAs), intermodulation distortion tests with a wide bias range were utilized to show the non-linearity in terms of frequency. The intermodulation distortion (IMD) components are shown to have a direct relationship with the R.F. transconductance derivatives obtained from the two-tone test. Additionally, it was found that when the second derivative of the transconductance is zero, the power of the 3
^rd
-order intermodulation distortion is at its lowest magnitude. A two-tone method has been offered as an analytical and empirical justification for the non-linearity of a transistor to emphasize the impact of R.F. transconductance. It is shown that the predicted data and the results of the measurements agree, making it an efficient tool for examining these devices.