A Low Inductance Power Module Packaging Design for High Performance Inverter Using SiC MOSFETs in Automotive Applications

The current trends of packaging of wide bandgap power semiconductor devices aim to lower the parasitic inductances, achieve higher operating temperatures, higher heat dissipation capabilities, and higher reliability structures. In this work, a double side package of a high performance inverter using SiC MOSFETs for automotive applications is studied. A novel 1200V/400A half bridge module with four SiC MOSFETs in parallel is proposed. The electromagnetic behaviour of the design is analysed using Finite Element Methods (FEM), in ANSYS, and the stray inductances are extracted for each component. Subsequently, a model in SPICE is established, and the stray inductances are used in a double pulse test to evaluate the static and dynamic performance of the module. The losses found from SPICE simulations are then used in the ANSYS model to examine the module's thermal behaviour. The simulation results of the proposed design indicate low total stray inductances and a decrease in total power losses compared to a commercial device.