Piezoelectric Properties and Electron-Phonon Interaction in Semiconductor Arsenide GaAs/AlAs Nanosystems of Plane Symmetry

The theory of the piezoelectric effect which is observed in semiconductor resonant-tunneling structures based on arsenide semiconductor compounds is proposed. Analytical expressions are obtained for the solutions of the Poisson equation, which define the components of the piezoelectric potential, which, in turn, is determined by the displacement components of the nanosystem medium - different types of acoustic phonons. On basis of the Green's function method, the electron-phonon interaction at T=0K and T=100K were investigated. The calculations of the modeling dependencies for piezoelectric potential components and the renormalized electronic spectrum as functions of the geometric design of the nanosystem under study were performed.