Demonstration of dual switching operation of vertical gate-all-around transistor using InGaAs/GaSb core-shell nanowires on Si

We demonstrated vertical gate-all-around field-effect transistor using the InGaAs/GaSb core-shell nanowires on Si. This device can operate both p-channel FET and n-channel TFET in the same channel architecture by changing bias polarity. The p-channel FET mode had a minimum subthreshold slope (SS) of 115 mV/decade and I
on
/I
off
ratio of around 10
²
at V
DS
= −1.00 V. The n-channel TFET mode showed SS of 105 mV/decade at V
DS
= 0.50 V.