Structure Dependent Characteristics of Infrared Radiation from Metal-Semiconductor Surface Micro-Structures

Longitudinal optical (LO) phonon resonant THz absorption and radiation subjected to metal-semiconductor surface stripe structures are observed due to oscillation of interface polarization charges. The radiation intensity is affected by the stripe structural characteristics accompanying independent LO peak positioned at 8.5THz. LO phonon scattering rate is more evident in wide and high mesa-height semiconductor stripes in which absorption efficiency is affected rather than narrower ones.