Abstract:
The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, ...Show MoreMetadata
Abstract:
The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed. Using 0.18 μm 3 V CMOS, cells from 5F/sup 2/ to 8F/sup 2/ are built in a charge-pump-free 4 Mb development vehicle. Direct overwrite, 10 ns reset times, 50 ns set times, and 1.0×10/sup 12/ cycling are achieved. At en-year data retention is projected at 120°C.
Published in: 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)
Date of Conference: 07-07 February 2002
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-7335-9
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