A 1.8 V 1 Gb NAND flash memory with 0.12 /spl mu/m STI process technology

A 1.8 V 1 Gb flash memory uses a 0.12 /spl mu/m STI process technology. A charge pump operates at <1.8 V. A center-placed row decoder is digitized in one block pitch by applying a 32-cell NAND structure. A page buffer, containing two latches, supports a cache-program to improve program speed to 7 MB/s.