Bidirectional Transition between Threshold and Bipolar Switching in Ag/SiO2/ITO Memristors

We report a reproducible memristor utilising a Ag/SiO
2
/ITO structure and having inherent threshold switching and bipolar memory switching. The device transitions from threshold to bipolar switching, as is well known by providing suitable compliance currents. We report that we can achieve the reverse switching from bipolar to threshold by applying an external current source. We can then transition between these two mechanisms at will by applying different voltage and current biases. Furthermore, we also report this structure being fabricated using simple sputtering mechanism.