Low-Capacitance, High-CDM ESD Protection Design with FEOL and BEOL Co-Optimization in 4nm Bulk FinFET Technology

In this paper, a low-capacitance silicon-controlled rectifier (LCSCR) structure with high-CDM robustness are proposed for high-speed I/O ESD protection. The LCSCR implemented with TSMC 4nm bulk FinFET technology can achieve high ESD robustness $(\gt 9\mathrm{A})$, low capacitance $(\lt 120$ fF) and low dynamic on-resistance $(\lt 0.5$ ohm) with compact geometry.