Oxide-Based Nanometric Layers Integrated With Silicon Substrate For New Multifunctional Applications

Oxide-based structures are receiving increasing interest due to their potential application in advanced nanodevices and nanosystems toward sectors of energy, environmental and detecting. In this work, multi-component structures based on nanometric chromium (Cr
3-X
O
3-Y
) and iron oxide (Fe
2
O
3-Y
) layers and composite nanostructure such as Si-SiO
2
-(CaO-SiO
2
) were designed using method of reactive pulsed laser deposition and sonochemical synthesis. Electric and photoelectric properties of the obtained oxide-based structures were investigated. It was found a surprising changes in the surface photovoltage responsivity of the nanometric layers integrated with silicon substrate at photoexcitation with photon energies greater than the band gap of Si. Besides, independent of the different origin, configuration and geometry of the structures studied, the inductive-type impedance has been observed for all of them.