Thermal-Powerloss Approximation Method for Determination of Efficiency in Semiconductor Devices

The article describes a method for determining static and dynamic power losses in power transistors, taking into account the influence of the module temperature. The results of a three-dimensional approximation of the energy characteristics of an IGBT module with a reverse diode of the type 2MBI150U2A-060, namely, the voltage drop between the collector and the emitter depending on the collector current and temperature, as well as the dependence of the turn-on energy, the turn-off energy and the return energy on the flowing current and temperature. The above expressions make it possible, by means of computer modeling in the Matlab / Simulink software environment, to determine the static and dynamic losses in the power switches of semiconductor converters of various topologies with different control systems, taking into account the influence of the temperature regime.