Metasurface-coupled near-field sensor implemented in 180nm CMOS

In this contribution we present a concept of a near-field sensor employing electromagnetic coupling between a 350 GHz resonant antenna and a metasurface constructed from an array of splitring structures which are monolithically integrated using a 180 nm silicon-based CMOS technology. We experimentally verify the coupling between these structures and show prospects of using this phenomenon for near-field sensing applications.