On-Wafer Characterization and Modelling of InP Resonant Tunnelling Diodes up to 500 GHz

This work reports the development of a multiline TRL calibration kit for submillimetre characterization of InP resonant tunnelling diodes (RTDs). Successful device S-parameter calibration, measurements, and de-embedding are reported in three different bands, and up to 500 GHz. A novel (for RTDs) technique for estimating the device's vertical structure parasitic elements based on measurements of semiconductor structures without active layers is proposed. An approach toward large-signal modelling of the RTD based on a symbolically defined component (SDD) has been implemented and successfully verified against measurements up to 500 GHz.