TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis

TCAD simulations are used to extract an accurate temperature-dependent X-parameter active device model, which describes it as instantaneously dependent on the junction temperature, and hence represents the ideal framework to analyze device self-heating. Once exported from TCAD into EDA tools, X-parameters are coupled to a dynamic thermal impedance, leading to a compact and efficient device black-box model, allowing for circuit-level analysis of thermal memory effects in microwave circuits, like Power Amplifiers (PAs), even in presence of complex modulated-signal excitation. In particular, we focus on the thermal analysis of a class-A PA at E-band based on a 54 nm Si FinFET. The accuracy of the temperature-dependent X-parameter model is demonstrated first by comparing circuit simulations with TCAD results in continuous wave. Then we extend the analysis to pulsed modulated operation, highlighting thermal dynamic effects as a function of the pulse period.