A W-Band Transmitter in 0.13um SiGe Technology

This paper presents a W-band transmitter front-end implemented in 0.13um SiGe BiCMOS technology. The transmitter consists of a driver amplifier, a phase shifter, a power amplifier, and input and output balun. A differential cascode structure is used in the driver amplifier and power amplifier design for improved gain and reverse isolation. W-band on-chip transformers are discussed in detail, which are widely used to realize low-loss and ultra-compact passive matching networks. This design strategy enables the entire transmitter core to fit within a 665
$\boldsymbol{\mu}\mathbf{m}\times 266\boldsymbol{\mu}\mathbf{m}$
die area. The transmitter is well matched within the design frequency band, achieving 12 dB of gain at 94 GHz and a total power consumption of 138 mW.