Ultrasonically stimulated diffusion of impurities in dislocation free silicon at room temperature

A discussion of the influence of ultrasound treatment (UST) at room temperature on the diffusion of impurities in a dislocation free Cz-Si is presented. We investigate the changes in surface properties and in photoelectric current decay (PCD). The experimental techniques are: chemical etching, and PCD measurements before and after UST. Also the initial data of UST influence on secondary ion mass spectrometry (SIMS) from sample surfaces are described. The results obtained strongly support the hypothesis of room temperature diffusion of impurities in dislocation free silicon under US action.