Planar GaAs-InGaAs Heterostructure for Generation in Long Wave Part of Terahertz Range

The article focuses on planar GaAs-InGaAs-based heterostructureson high frequency generation in low wave part of terahertz range. Diodes represent GaAs canal placed on a semi-insulating substrate with two contacts and InGaAs active side boundary in the form of a semiconductor structure which is located between the channel and metal electrode and connected to the ohmic contact of the anode. For simulation of diode. Ensemble Monte Carlo method is used. Direct current and high-frequency characteristics of diode are obtained. The existing current instability in both canal and back side element are demonstrated. Addition of an active side element is to expand maximal generation frequency up to 300 GHz in fundamental mode.