Multilevel resistive switching of ZnO memristive crossbar prototype for artificial neural systems

The work represents multilevel resistive switching in ZnO thin films, formed by pulse laser deposition. The influence of ZnO electron concentration on the parameters of the multilevel resistive switching effect was investigated experimentally. The values of the electron concentration at which the maximum HRS/LRS ratio 7840±421 and the minimum switching voltage 1.22±0.11 V are determined. The retention time of different synaptic levels obtained on the surface of ZnO films is not less than 10
⁵
s. The prototype Si/SiO
2
/TiN/ZnO/W crossbar is manufactured and studied. The results obtained can be used in the fabrication of energy-efficient resistive memory elements of artificial neural systems.