Interband Cascade LEDs Grown on Silicon

Epi-up interband cascade light emitting devices grown on 4° offcut silicon exhibit efficiencies 75% of those for epi-down ICLEDs grown on GaSb when differences in architecture are accounted for. At 100 mA, 200-μm-diameter mesas produce 184 μW cw at 25°C and 140 μW at 85°C.