Modeling of Noise Figure for GaAs pHEMTs based on Frequency and Temperature

The noise figure modeling in microwave range for pre and post fabricated GaAs pHEMTs on multilayer technology are demonstrated in this work over a wide temperature range, e.g., -25 to 125°C. At different frequencies and temperatures, the minimum noise figure (NF
min
), association gain (G
a
), and equivalent noise resistance (R
N
) are all typical noise parameters that have been modeled. The temperature dependency of the noise-oriented parameters was also evaluated. Noise-oriented parameters of InP- and GaAs HEMTs and as well as GaN HEMTs on different substrates are comparable to the two GaAs pHEMTs technologies. According to the findings, GaAs pHEMTs have much potential in the high-temperature operation of LNAs.