Post-CMOS Devices: Landau’s Anisotropy Sensitivity Analyses for Organic Ferroelectric Gate Stack and Its Application to NCTFET

This study aims to offer a generic simulation framework for metal/organic ferroelectric/metal (M/OFE/M) devices using Ginzburg-Landau-Khalatnikov (GLK) model for post-CMOS ultralow voltage applications. The M/OFE/M device with and without the external resistor (R) is simulated within the Synopsys
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technology computer-aided design (TCAD) environment. The OFE material poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] is modeled as an ad-hoc OFE material in the TCAD material library because it is not yet included in the standard TCAD material library. The significance of the GLK model in harnessing the negative capacitance (NC) effect at an ultralow voltage (V
G
= 0.5 V) over the conventional Preisach model is discussed briefly. Moreover, the sensitivity analyses on quasistatic and non-quasistatic M/OFE/M devices with 10 nm OFE to the anisotropy constants, switching resistivity, and OFE thickness within 10% to 20% of the benchmark values are investigated. Our simulation findings show that: P(VDF-TrFE)’s coercivity is reduced by 84.89% with respect to its HfZrO counterpart; the speed of the occurrence of the NC effect is closely related to the input signal rising time and switching resistivity offered by the OFE; the total switched charge density of the proposed M/OFE/M is almost comparable to the channel charge density of a CMOS transistor. Finally, this study suggests an OFE-NC tunnel field-effect transistor as a potential post-CMOS transistor with a minimum subthreshold swing of 14.17 mV/decade, which is significantly steeper than the fundamental thermionic constraint of 60 mV/decade in CMOS.