GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage

This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.