Influence of Current Collapse due to $V_{ds}$ Bias Effect on GaN-HEMTs $I_{d}-V_{ds}$ Characteristics in Saturation Region

A new method is proposed in this paper to investigate the influence of current collapse effect on the
$I_{d}-V_{ds}$
characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured
$I_{d}-V_{ds}$
characteristics with and without the
$V_{ds}$
bias are compared, which shows the effect of charge trapping due to the
$V_{ds}$
bias on device
$I_{d}-V_{ds}$
characteristics in saturation region. These data will be used for a device model including the current collapse effect in full
$I_{d}-V_{ds}$
region.