Gate Input Capacitance Characterization for Power MOSFETs Using Turn-on and Turn-off Switching Waveforms

We propose a novel method for characterizing the input capacitance of power metal-oxide semiconductor field-effect transistors (MOSFETs). In contrast with the conventional method, our switching-based characterization extracts gate-source and gate-drain capacitances in a single setup, without partial differentiation. Characterization using both turn-on and turn-off switching waveforms improved the simulation accuracy and reduced the switching timing error by a factor of more than 2.5x.