Impact of Bond Wire Configuration on the Power Cycling Capability of Discrete SiC-MOSFET Devices

This work investigates the power cycling capability of SiC MOSFETs
$(60\ \mathrm{m}\Omega/1200\mathrm{V})$
in TO-247-packages with two different bonding configurations. As a result, a difference in lifetime by a factor of 1.5 to 2 is determined. The failure mode was an increase in forward voltage drop by degradation of the bond wire connection. The ANSYS simulations (thermal-electrical and mechanical) confirm that several thinner bond wires have a higher power cycling capability compared to a few bond wires with larger diameters.