Design of 3 mm Frequency Band SiGe BiCMOS Power Amplifier

This paper presents a 3mm frequency band power amplifier based on the technology of SiGe BiCMOS. A fully differential structure consisting of cascode was adopted, and transformer match was used to achieve good performance and save areas. Measured peak gain is 4.7 dB at 101 GHz, with a 3 dB bandwidth of 23 GHz from 87 GHz to 110 GHz. The input and output return losses are less than -7.4 dB and -7.6 dB, respectively. The isolation is less than -27.4 dB in the 3 dB bandwidth range. The simulated result of output 1dB compression point power is 5.1 dBm at 94 GHz. The chip size is 1.15 mm×0.7 mm (including input and output test baluns and pads), which can be applied to radar, communication, imaging and other fields.