A two-step parameter extraction methodology for graphene field-effect transistors

Accurate device models and parameter extraction methods are of utmost importance for characterizing graphene field-effect transistors and for predicting their performance in circuit applications. For DC characterization, accurate extraction of the transconductance parameter (i.e., low-field mobility) and series resistance is of particular importance. In this paper, methods for extraction of these parameters will be discussed.A first-order mobility degradation model that can be used to separate information about mobility degradation and series resistance for a set of graphene field-effect transistors will also be discussed.