Procedure for Controlling Pad Scrub During High-Temperature Wafer Probing

Stability and control of high-temperature wafer probing was studied. A new procedure was demonstrated that enables control of the probe needle scrub distance at elevated temperatures. Initial scrub measurements were made and compared for three probe card motherboards at 125 °C, 150 °C, and 175 °C. Then, applying the new procedure, scrub distance was measured at 175 °C for the three motherboards over 144 hours of probing. The new procedure enabled control (and thus, minimization) of the probe pad scrub distances.