Characterization of Si Epitaxial Layer grown on highly-doped Si substrate by using THz reflection spectroscopy

Properties of Si epitaxial layer with thinner thickness than 6um and doping concentration of1014 to $10^{16}/\mathrm{c}\mathrm{m}^{3}$, grown on highly doped Si substrate, were analyzed by time domain THz reflection spectroscopy. For improving the measurement resolutions, photo-excitation technique was applied on this spectroscopy. And we could obtain the epilayer properties with resolutions of 0.1um in thickness and $10^{15}/\mathrm{c}\mathrm{m}^{3}$ in doping concentration.