Study of thermal crosstalk in Avalanche Photodetectors in THz domain

The Si-Ge avalanche photodetectors coupled with a thin multiplication region can be used for a CMOS compatible high speed optical receiver designs as it has a lower dark current and needs a lower operational voltage. However, the thermal conductance of the chip materials results in thermal crosstalk that significantly degrades the photodetector performance in terms of the Figure of merit parameters like dark current, photocurrent, data transmission, etc. In this work, we illustrate through simulations the deep trench chip design to mitigate the thermal crosstalk effect and therefore improve the photodetector performance in terms of dark current and photocurrent.