A multiline InP-TRL kit for sub-mmWave characterization of InP-HEMT

We investigate the development of on-wafer multiline Thru-Reflect-Line calibration kits to enable transistor characterization beyond 110 GHz. The final objective is to measure the S parameters of a HEMT having a very high cut-off frequency (up to THz range). A first kit design shows that the use of configurations suitable for the frequency bands used in the calibration will optimize the measurements of THz transistors.