Improve the Linearity of NOR Flash Memory Used for Vector Matrix Multiplication

Mem-computing, which performs operations in memory arrays to prevent performance bottleneck caused by data transmission in applications using AI, is proposed by adopting an extended coupling capacitor between the floating gate and drain node of NOR type flash memory cells. The proposed cell extends double the linearity range of input. At the same range window of input, the SNR is improved by 18.7% from 27.8dB to 33.0dB that corresponds 1-bit increase of effective number of bits. Both extension of linearity range and SNR enhancement may provide more precise inference of recognition.