Tunneling FET Based on Monolayer Antimonene: The Role of Vacancy

In this work, the electrical performance of the antimonene TFET is investigated using nonequilibrium Green’s function (NEGF) through a tight-binding approach. In the following, the effect of atom vacancy on the electrical behavior of the TFET is explored. The creation of the mid-gap state due to the vacancy is shown using the local density of states (LDOS) for the TFET and the density of states (DOS) for a ribbon. Furthermore, the effects of these mid-gap states on the ON-current, OFF-current, ON– OFF ratio, and subthreshold swing (SS) are discussed. Finally, the effect of the scaling in presence of vacancy is explored. The results show that a small vacancy percentage declines the SS while the variation of the ON– OFF ratio is negligible.