A 1700 V LPT-CSTBT with low loss and high durability

This paper describes a new 1700 V power device based on a wide cell pitch carrier stored trench bipolar transistor (CSTBT). The new chip also utilizes a light punch through (LPT) vertical structure that is produced using low cost single crystal (nonepitaxial) wafer material. The device is optimized to provide the best trade-off between losses and ruggedness for industrial power conversion applications. A new gate process that enhances the reliability of the gate isolation film is another key technology utilized in the development of this device. The new 1700 V device demonstrates the successful extension of technologies previously used for 1200 V CSTBT devices to higher blocking voltages.