Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters

We demonstrate binary and multilevel electrical programming of the phase change material Ge
2
Sb
2
Te
5
(GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.