Demonstration of 372 nm Micropillar Light Emitting Diodes Using Novel Ni/Au/Ni Dry Etch Mask and Ohmic Contact

Micropillar InGaN/AlGaN LEDs were fabricated using a novel Ni/Au/Ni etching mask. This Ni/Au/Ni structure effectively combines a good ohmic contact and etching mask into a single structure, allowing for demonstration of 372 nm micropillar LEDs.