Low-Frequency Noise Characteristics of BEOL-Compatible IWO Transistor

Low-frequency noise (LFN) characteristics of W-doped In2O3 (IWO) transistors with gate lengths ranging from 50nm to 500nm are presented. To the best of our knowledge, this is the first reported LFN of a scaled amorphous semiconducting oxide transistor. The IWO transistors show comparable noise power spectral density compared to scaled front-end silicon transistors with equivalent gate lengths. This implies high electrical integrity of the dielectric-channel interface in the IWO transistors for monolithic 3D integrated circuits.