Evaluation of Single-Electron Tunneling Operation in High-Concentration Codoped Si Nano-Transistors

With silicon transistors reaching the limits of miniaturization, single-electron tunneling (SET) using dopant-atoms as quantum dots has attracted increased interest in the past decade. In order to elucidate SET operation in the presence of both donors and acceptors in a nanoscale channel, we fabricated co-doped silicon nano-transistors and report the results of low-temperature measurements and simulations. Here, we show that such co-doped silicon nano-transistors exhibit SET operation, likely mediated by clusters of donors left uncompensated by the acceptors in the channel. These results can open research on Si nano-transistors for SET operation by using both donors and acceptors in defining the potential profile.