A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD InOx and Field-Induced Polar-Axis Alignment for 3D High-Density Memory

We have developed and demonstrated a vertical channel ferroelectric and anti-ferroelectric FET (FeFET/AFeFET) with ALD InOx, and verified field-induced polar-axis alignment by both experimental and theoretical study, for 3D high-density memory application, for the first time. L
g
=50nm short channel FeFETs realize memory operation. In-plane polarization in an as-grown layer can transit to out-of-plane polarization by electric field. Half-loop hysteresis in anti-ferroelectric can offer a new solution for the weak erase problem in oxide semiconductor channel as an AFeFET. This work provides the technology opportunities for 3D high-density memory.