Comparison Study on EMI Performance of SiC and Si diodes in Cockcroft-Walton Voltage Multiplier

This work studies the electromagnetic interference (EMI) performance of Silicon Carbide (SiC) Schottky barrier diode in the Cockcroft-Walton voltage multiplier (CWVM). It’s compared with Silicon (Si) fast recovery diode based on the time-domain waveforms and frequency-domain spectra. The experimental result shows that the EMI in SiC-based CWVM is more severe than the Si-based from frequency over 300 kHz. However, with stage numbers of CWVM increased to 6, EMI levels of both circuits are similar.