A Low Phase Noise 30 GHz Oscillator Topology for Resonant-Fin-Transistors Based High-Q On-chip Resonators in 14 nm Technology

This work presents an ultra low phase noise 30 GHz oscillator topology in 14 nm technology for an active mode Micro-electro-mechanical systems (MEMS) based resonator that utilizes resonant-fin transistors (RFT). A novel oscillator architecture has been presented for the active mode RFT, which can be modelled as a voltage controlled current source with 270° phase shift between its output current and input voltage. The proposed oscillator has been designed in 14 nm GF technology and simulation results show that it achieves phase noise less than −144 dBc/Hz at 1 MHz offset for 30 GHz carrier frequency for active mode RFT with quality factor of 10,000, while consuming 5.5 mW power from 0.8 V supply.