Design and Simulation of a T-gated AlGaN/GaN HEMT with Added Mini Field Plate

The impacts of a HEMT with a 60 nm T-gated mini field plate device are examined in this study research work, along with the DC/RF properties of the device. The implementation of T- Gate field plate along with the Graded barrier layer configuration in the device provides an extreme impact in the drain current (I
ds
) of the device. A graded channel AlGaN/GaN HEMTs with the implementation of mini field plate (MFP) exhibits with I
ds
=1.6 A/mm. In the proposed de vice the InAlGaN layer is simulated which enhances breakdown voltage of 96% while maintaining RF performances of the simulated device. The simulated device exhibits breakdown and fT of 98V and 185GHz respectively.