Theoretical Prediction on Temperature Dependence of Diffusion Coefficient of Various SiC Nanowires

This study theoretically predicts the diffusion coefficient (D
SiC
) of three-different SiC nanowires (3C-SiC, 4H-SiC, and 6H-SiC). A statistical mechanics based theoretical model is shown that can calculate the diffusion coefficient. Since the primary part of the model is based on Boltzmann’s statistics, the calculations are performed for temperatures higher than 100 K. It is strongly suggested that the crystalline structure influences diffusion coefficient characteristics, and that the multi-band transport should be taken into account in order to properly evaluate the diffusion coefficient. The diffusion coefficient of 4H-SiC wires is not sensitive to temperature, as well as wire width at low temperatures. These characteristics are compared with those of 3C-SiC, 6H-SiC, Ge and Si wires. Detailed discussed show how the crystalline structure and the energy band structure influence the characteristics of the diffusion coefficient.