A Switchless Bidirectional Distributed Amplifier with 2-dB Gain Variation in One Decade Frequency Range in 90-nm CMOS Process

This paper presents a switchless bidirectional distributed amplifier (BDDA). The proposed BDDA is implemented using a skew-symmetric layout in 90 nm CMOS technology. The BDDA achieves a flat gain within the desired frequency range which is benefit from the skew-symmetric layout. The measured gain variation is 2 dB from 3 to 30 GHz with a peak small-signal gain of 13.8 dB. The 3-dB bandwidth is 31.5 GHz and the circuit consumes a dc power of 45.8 mW. The BDDA occupies an area of 0.93 mm
²
.