A 90-125 GHz Stacked PA in 130 nm InP HBT with 18.3 % peak PAE at 15.3 dBm Output Power

This paper presents a wideband stacked power amplifier implemented in a 130 nm InP HBT process. The phase of the load lines at the two stages are aligned using an interstage matching network to maximize output power. The peak DC power consumption is 160 mW. The amplifier achieves a peak gain of 11.5 dB and a 3 dB bandwidth greater than 50 GHz, measured from 90 GHz to 140 GHz with a peak PAE and output power at 112.5 GHz of 18.3 % and 15.3 dBm respectively. This design demonstrates the viability of the stacked PA topology in improving power output in amplifiers designed in process nodes with low breakdown voltages.