Performance improvement for Cu interconnects by SAM and ELD technologies

SAM (Self-Assemble-Monolayer) is a material with selectively growth on only metal or dielectric film. Moreover, SAM can have functionality such as growth inhibitory property of ALD film and Cu barrier property. The barrier/liner metal at Via bottom can be removed by SAM which has an ALD film growth inhibitory property, and by using the ELD-Cu(Electro-Less-Deposition) Pre-Via-Fill process, Cu volume at Via can be increased and Via resistance can be reduced. In this study, we have introduced the process that can reduce the process steps and reduce Via resistance by using SAM with Cu barrier properties.