Characterization of TiO2 deposited by ALD for SiC MOS capacitor application

In this work, TiO
2
films with thickness of 15, 25 and 35 nm, and deposited by Atomic Layer Deposition (ALD), were studied as oxide in MOS capacitors using Silicon substrates. These TiO
2
thin films presented a rutile + anatase crystal structure, a refractive index of 2.1, 2.3 and 2.3; and roughness of 1, 0.9 and 0.7 nm, respectively. The electrical characterization of MOS capacitors on Si substrates, showed the best results for 35 nm thickness. This thickness showed the highest dielectric constant value, highest CMAX, lowest Q
0/q
and lowest leakage current in the inversion. Therefore, this 35 nm thick TiO
2
film was used in the fabrication of the SiC capacitor. The C×V curve of the capacitor in SiC showed high values of CMAX and CMIN, negative Q
0/q
and practically zero hysteresis. These results are better than those found in the literature. The current density values in the accumulation and inversion are better than the literature.